Effect of a large hole reservoir on the charge transport in TiO2/organic hybrid devices.
Identifieur interne : 000E77 ( Main/Exploration ); précédent : 000E76; suivant : 000E78Effect of a large hole reservoir on the charge transport in TiO2/organic hybrid devices.
Auteurs : RBID : pubmed:22796904Abstract
We have fabricated hybrid devices in the form of indium tin oxide/titanium dioxide/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/copper (ITO/TiO(2)/P3HT:PCBM/Cu) to clarify the impact of the TiO(2)/P3HT:PCBM interface on the charge transport using the charge extraction by linearly increasing voltage (CELIV) technique. We found that a large equilibrium charge reservoir is accumulated at negative offsets at the TiO(2)/P3HT:PCBM interface leading to space charge limited extraction current (SCLC) transients. We show analytically the SCLC transient response and compare the experimental data to calculated SCLC at a linearly increasing voltage. The theoretical calculations indicate that the large charge reservoir at negative offset voltages is due to thermally generated charges combined with poor hole extraction at the ITO/TiO(2) contact, due to the hole blocking character of TiO(2).
DOI: 10.1039/c2cp41543g
PubMed: 22796904
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Effect of a large hole reservoir on the charge transport in TiO2/organic hybrid devices.</title><author><name sortKey="Sanden, Simon" uniqKey="Sanden S">Simon Sandén</name><affiliation wicri:level="1"><nlm:affiliation>Department of Natural Sciences, Åbo Akademi University, Finland. simon.sanden@abo.fi</nlm:affiliation><country xml:lang="fr">Finlande</country><wicri:regionArea>Department of Natural Sciences, Åbo Akademi University</wicri:regionArea></affiliation></author><author><name sortKey="Sandberg, Oskar" uniqKey="Sandberg O">Oskar Sandberg</name></author><author><name sortKey="Xu, Qian" uniqKey="Xu Q">Qian Xu</name></author><author><name sortKey="Sm Tt, Jan Henrik" uniqKey="Sm Tt J">Jan-Henrik Smått</name></author><author><name sortKey="Ju Ka, Gytis" uniqKey="Ju Ka G">Gytis Juška</name></author><author><name sortKey="Linden, Mika" uniqKey="Linden M">Mika Lindén</name></author><author><name sortKey="Osterbacka, Ronald" uniqKey="Osterbacka R">Ronald Osterbacka</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1039/c2cp41543g</idno><idno type="RBID">pubmed:22796904</idno><idno type="pmid">22796904</idno><idno type="wicri:Area/Main/Corpus">000B86</idno><idno type="wicri:Area/Main/Curation">000B86</idno><idno type="wicri:Area/Main/Exploration">000E77</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have fabricated hybrid devices in the form of indium tin oxide/titanium dioxide/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/copper (ITO/TiO(2)/P3HT:PCBM/Cu) to clarify the impact of the TiO(2)/P3HT:PCBM interface on the charge transport using the charge extraction by linearly increasing voltage (CELIV) technique. We found that a large equilibrium charge reservoir is accumulated at negative offsets at the TiO(2)/P3HT:PCBM interface leading to space charge limited extraction current (SCLC) transients. We show analytically the SCLC transient response and compare the experimental data to calculated SCLC at a linearly increasing voltage. The theoretical calculations indicate that the large charge reservoir at negative offset voltages is due to thermally generated charges combined with poor hole extraction at the ITO/TiO(2) contact, due to the hole blocking character of TiO(2).</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">22796904</PMID><DateCreated><Year>2012</Year><Month>10</Month><Day>03</Day></DateCreated><DateCompleted><Year>2013</Year><Month>02</Month><Day>11</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1463-9084</ISSN><JournalIssue CitedMedium="Internet"><Volume>14</Volume><Issue>41</Issue><PubDate><Year>2012</Year><Month>Nov</Month><Day>7</Day></PubDate></JournalIssue><Title>Physical chemistry chemical physics : PCCP</Title><ISOAbbreviation>Phys Chem Chem Phys</ISOAbbreviation></Journal><ArticleTitle>Effect of a large hole reservoir on the charge transport in TiO2/organic hybrid devices.</ArticleTitle><Pagination><MedlinePgn>14186-9</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1039/c2cp41543g</ELocationID><Abstract><AbstractText>We have fabricated hybrid devices in the form of indium tin oxide/titanium dioxide/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/copper (ITO/TiO(2)/P3HT:PCBM/Cu) to clarify the impact of the TiO(2)/P3HT:PCBM interface on the charge transport using the charge extraction by linearly increasing voltage (CELIV) technique. We found that a large equilibrium charge reservoir is accumulated at negative offsets at the TiO(2)/P3HT:PCBM interface leading to space charge limited extraction current (SCLC) transients. We show analytically the SCLC transient response and compare the experimental data to calculated SCLC at a linearly increasing voltage. The theoretical calculations indicate that the large charge reservoir at negative offset voltages is due to thermally generated charges combined with poor hole extraction at the ITO/TiO(2) contact, due to the hole blocking character of TiO(2).</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Sandén</LastName><ForeName>Simon</ForeName><Initials>S</Initials><Affiliation>Department of Natural Sciences, Åbo Akademi University, Finland. simon.sanden@abo.fi</Affiliation></Author><Author ValidYN="Y"><LastName>Sandberg</LastName><ForeName>Oskar</ForeName><Initials>O</Initials></Author><Author ValidYN="Y"><LastName>Xu</LastName><ForeName>Qian</ForeName><Initials>Q</Initials></Author><Author ValidYN="Y"><LastName>Smått</LastName><ForeName>Jan-Henrik</ForeName><Initials>JH</Initials></Author><Author ValidYN="Y"><LastName>Juška</LastName><ForeName>Gytis</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Lindén</LastName><ForeName>Mika</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Osterbacka</LastName><ForeName>Ronald</ForeName><Initials>R</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Phys Chem Chem Phys</MedlineTA><NlmUniqueID>100888160</NlmUniqueID><ISSNLinking>1463-9076</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>7</Month><Day>17</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>7</Month><Day>17</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>7</Month><Day>17</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1039/c2cp41543g</ArticleId><ArticleId IdType="pubmed">22796904</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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